‘RF Waveform Characterization of RF GaN Transistors'

RF GaN transistors are emerging as the technology of choice for a broad range of security and communications applications covering frequency from RF thru to mm-wave requiring high RF power.  This presentation introduced Continuous Wave RF Waveform Engineering measurements systems.  It’s utilization for both GaN HFET technology optimization, addressing issues such as knee walkout, and GaN HFET power amplifier design innovation, application of harmonic matching and continuous modes for high efficiency operation, will be covered.  It concluded the link with CAD design will be highlighted via measurement based behavioural models.