‘The care and feeding of GaN RF power amplifiers’
This Deep Tech Talk introduced the new generation of RF power devices based on GaN and their use for applications covering the 5G spectrum.
The talk was in two parts, with the first covering the large signal RF device characterisation of GaN HFETs. Large signal engineered CW I-V Waveforms will highlight the device advantages for high power RF, as well as pointing out present technology limitations. Link with design will be highlighted via measurement based behavioural models. Emerging modulated characterization solutions, targeting trapping/memory concerns, will be introduced.
The second part dealt with the application of these devices to 5G power amplifiers, explaining the design approach, then demonstrating the performance with the high peak-to-average modulation used in 5G.
This talk would be useful to all engineers working on RF power amplifiers, and particularly those involved in 5G, from equipment design through to site commissioning.
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