'The use of GaN devices for Broadband, Efficient and Linear RF Power Amplifiers'

Gallium Nitride (GaN) devices have enabled the design of broadband, linear and efficient power amplifiers. GaN devices with their higher breakdown voltages and higher input and output impedances expand the design space to make use of more efficient and wideband amplifier classes. This presentation will look and how broadband amplifier designs can be combined with linearisation techniques to create amplifiers that can meet both the linearity and efficiency requirements for future systems. The talk will also look at how this is developing with the move to the emerging GaN on diamond technology.